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An SOI MOSFET for circuit simulators considering nonlinear dynamic self-heating

: Bielefeld, J.; Pelz, G.; Abel, H.B.; Zimmer, G.


Maszara, W.P. ; Institute of Electrical and Electronics Engineers -IEEE-:
International SOI Conference '94. Proceedings
Piscataway/N.J., 1994
ISBN: 0-7803-2406-4
International SOI Conference <1994, Nantucket Island/Mass.>
Conference Paper
Fraunhofer IMS ()
circuit simulation; electric heat; metal-oxide-semiconductor FET; MOS-Transistor; Schaltungssimulation; Simulationsmodell; Strömungssensor; transistor model; Transistormodell

Modeling of the self-heating effect in SOI MOSFET's recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into SPICE3 netlist. The dynamics of the self-heating process will be shown by several simulations.