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An SOI 0.6mV offset temperature-compensated hall sensor readout IC for automotive applications up to 200 deg C

: Kordas, N.; Derksen, S.; Fiedler, H.-L.; Schmidt, M.; Yasujima, A.; Matsui, M.; Nagano, S.; Ishibashi, K.

DOI: 10.1109/ISSCC.1999.759162

	Wuorinen, J.H.; Martin, J.N.; Olivari, B.A.; Fujino, L.C.: IEEE International Solid-State Circuits Conference 1999. Digest of technical papers Piscataway, NJ: IEEE, 1999 ISBN: 0-7803-5126-6 ISBN: 0-7803-5127-4 ISBN: 0-7803-5128-2 ISBN: 0-7803-5129-0 pp.134-135 (Hauptbd.)
	International Solid-State Circuits Conference (ISSCC) <46, 1999, San Francisco/Calif.>

	English
	Conference Paper
	Fraunhofer IMS ()
	Hall-Sensor; Hochtemperatur; SIMOX-Technologie

Abstract
A high-temperature SIMOX technology using tungsten metallization has been employed for fabrication of a 1.7 mm2 low-offset temperature compensated Hall-readout IC. The chip is suitable for automotive applications up to 200 deg C. The automatic offset cancellation scheme allows for time continuous operation with 0.6mV offset.