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1990
Conference Paper
Title

Smart CMOS pressure sensor

Abstract
The fabrication of capacitive pressure sensors using silicon integrated circuit processing is described. The pressure sensors were fabricated using planar etch processing techniques. This results in very small sensors having membrane diameters between 50 micrometers and 150 micrometers. The pressure dependence was studied up to 5 bars. Concepts for on chip signal conditioning by using the switch-capacitor method are given.
Author(s)
Eichholz, J.
Kandler, M.
Manoli, Y.
Mokwa, W.
Mainwork
22nd International Symposium on Automotive Technology and Automation 1990. Proceedings. Vol.2  
Conference
International Symposium on Automotive Technology and Automation (ISATA) 1990  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • capacitive pressure sensor

  • planar pressure sensor

  • pressure sensor array

  • sensor readout circuit

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