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Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal

 
: Kal, S.; Kasko, I.; Ryssel, H.

:

Electronics Letters 30 (1994), No.3
ISSN: 0013-5194
English
Journal Article
Fraunhofer IIS B ( IISB) ()
germanium; implantation profile; ion implantation; rapid thermal annealing; silicon; simulation

Abstract
We have shown that a single crystal Si-Ge layer can be formed by high dose high74 Ge ion implantation in silicon and annealing the sample using sequential RTA at a specified temperature and time cycle. However, detailed crystallographie analysis is not included in this short Letter. Lattice strain analysis can be caried out with double crystal X-ray diffraction (DCD) and the crystalline quality of the regrown layer may be evaluated by cross-sectional TEM.

: http://publica.fraunhofer.de/documents/PX-33896.html