Vorteile von Al-freien GaInP/InGaAs PHEMTs für Leistungsanwendungen

: Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.

Abstract
The performance and temperature stability of Al-free GaInAs/GaAs PHEMTs with GaInP as a Schottky barrier is reported. GaInP/GaInAs/GaAs PHEMTs with a 1 mu m gate length show an f(max) value of 76GHz with a maximum drain current of 570mA/ mm and a drain-source breakdown voltage of 16V. Moreover, the first results on short gate length devices (0.15mu m) yield f(T) and f(max) values of 106 and 203GHz, respectively. In this case, the drainsource breakdown voltage is as high as 8V. These results demonstrate the great potential of GaInP/GaInAs PHEMTs for power applications.