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1989
Conference Paper
Titel
Simulation of the lateral spread of implanted ions - theory
Abstract
As device dimensions have shrinked to below 1 My m, the description of the lateral spread of ions implanted into silicon becomes very important in order to yield realistic values for channel lengths of MOS devices. In this paper, a new analytical model which is a first step towards the description of the depth-dependence of the lateral spread is introduced. Furthermore, a Boltzmann Transport program capable of calculating the range parameters are given. At last, comparisons with Monte-Carlo simulations are made.
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