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Simulation of silicon semiconductor processing

: Pichler, P.; Ryssel, H.


European Transaction on Telecommunications and Related Technologies 1 (1990), No.3, pp.293-299 : Abb.,Lit.
ISSN: 1120-3862
Journal Article
Fraunhofer IIS B ( IISB) ()

In VLSI development process simulation is needed to understand the interaction between successive process steps and to give input data for device simulation. The goal of this paper is to sketch the present state of process simulation and to give the reader a feeling of the difficulties but also of what can be gained by using such tools. Due to their importance, most attention will be given to the simulation of ion implantation, diffusion, and oxidation.