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  4. Simulation of silicon semiconductor processing
 
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1990
Journal Article
Title

Simulation of silicon semiconductor processing

Abstract
In VLSI development process simulation is needed to understand the interaction between successive process steps and to give input data for device simulation. The goal of this paper is to sketch the present state of process simulation and to give the reader a feeling of the difficulties but also of what can be gained by using such tools. Due to their importance, most attention will be given to the simulation of ion implantation, diffusion, and oxidation.
Author(s)
Pichler, P.  orcid-logo
Ryssel, H.
Journal
European Transaction on Telecommunications and Related Technologies  
DOI
10.1002/ett.4460010310
Language
English
IIS-B  
Keyword(s)
  • Prozeßsimulation

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