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Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

 
: Jäger, H.-U.

Baccarani, G.; Rudan, M.; Selberherr, S.; Stippel, H.; Strasser, E.:
Simulation of semiconductor devises and processes : Fifth International Conference on Simulation of Semiconductor Devices and Processes (SISDEP 93), held at the Technical University of Vienna, Austria, September 7 - 9, 1993
Wien: Springer, 1993 (Simulation of semiconductor devices and processes 5)
ISBN: 0-387-82504-5
ISBN: 3-211-82504-5
pp.137-140
International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) <5, 1993, Vienna>
English
Conference Paper
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Diffusionsgleichung; Hochdosis-Bor-Ionenimplantation; Ionenstrahl-induzierte Diffusion; silicium; Verstärkte Diffusion

Abstract
Coupled diffusion-reaction equations for boron and for point defects and rather simple initial conditions are used to model the implantation-induced transiently enhanced diffusion and the electrical activation of high-dose boron distributions during annealing.

: http://publica.fraunhofer.de/documents/PX-33698.html