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  4. Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
 
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1989
Journal Article
Title

Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik

Abstract
During the last few years, process simulation has become a valuable tool for the optimization of semiconductor fabrication technologies. In this paper, some models, measurement methods and algorithms for ion implantation, diffusion and oxidation are discussed.
Author(s)
Lorenz, J.  
Pelka, J.
Ryssel, H.
Journal
FhG-Berichte  
Language
German
IIS-B  
Keyword(s)
  • diffusion

  • diffusion oxidation

  • dopant profile

  • Dotierungsprofil

  • Halbleitertechnologie

  • implantation

  • ion implantation

  • measurement technique

  • Meßverfahren

  • oxidation

  • process simulation

  • Prozeßsimulation

  • semiconductor technology

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