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Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik

 
: Lorenz, J.; Pelka, J.; Ryssel, H.

FhG-Berichte (1989), No.1, pp.42-47 : Abb.,Lit.
ISSN: 0342-1953
German
Journal Article
Fraunhofer IIS B ( IISB) ()
diffusion; diffusion oxidation; dopant profile; Dotierungsprofil; Halbleitertechnologie; implantation; ion implantation; measurement technique; Meßverfahren; oxidation; process simulation; Prozeßsimulation; semiconductor technology

Abstract
During the last few years, process simulation has become a valuable tool for the optimization of semiconductor fabrication technologies. In this paper, some models, measurement methods and algorithms for ion implantation, diffusion and oxidation are discussed.

: http://publica.fraunhofer.de/documents/PX-33652.html