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SIMOX investigations

 
: Zimmer, G.

Japan Germany Forum on Information Technology
1991
pp.278-281
Japan Germany Forum on Information Technology <7, 1991, Tokyo>
English
Conference Paper
Fraunhofer IMS ()
SIMOX

Abstract
The current status of silicon on insulator development at IMS will be reviewed in this paper. The SOI material is prepared by high dose implantation of oxygen into silicon (SIMOX) by using a dedicated very high current implanter. Process development is done on CMOS VLSI, on the integration of CMOS with power devices (smart power) and on sensor applications.

: http://publica.fraunhofer.de/documents/PX-33549.html