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  4. SIMOX, an efficient etch-stop to fabricate silicon membranes with well defined thickness. Part 2
 
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1992
Conference Paper
Title

SIMOX, an efficient etch-stop to fabricate silicon membranes with well defined thickness. Part 2

Abstract
In this paper it is shown that low dose SIMOX is an efficient etch-stop to fabricate silicon membranes with well defined thickness. Due to the very high selectivity of TMAH as etch solution a four times lower oxygen dose than for standard SIMOX production is sufficient to form a good etch stop layer. This technique allows for a simple and very cost effective batch process production in addition into a large improvement of the silicon film quality.
Author(s)
Dura, H.-G.
Gassel, H.
Mokwa, W.
Vogt, H.
Mainwork
Fifth International Symposium on Silicon-on-insulator technology and devices '92. Proceedings  
Conference
International Symposium on Silicon-on-Insulator Technology and Devices 1992  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • Ätzen

  • buried oxide

  • epitaxial layer

  • Epitaxialschicht

  • etch stop

  • etching

  • Membran

  • Membranes

  • SIMOX

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