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SIMOX, an efficient etch-stop to fabricate silicon membranes with well defined thickness. Part 2

 
: Dura, H.-G.; Gassel, H.; Mokwa, W.; Vogt, H.

Bailey, W.E. ; Electrochemical Society -ECS-:
Fifth International Symposium on Silicon-on-insulator technology and devices '92. Proceedings
Pennington/N.J., 1992 (Electrochemical Society. Proceedings 92-6)
ISBN: 1-56677-013-0
pp.403-408
International Symposium on Silicon-on-Insulator Technology and Devices <5, 1992, St. Louis/Mo.>
English
Conference Paper
Fraunhofer IMS ()
Ätzen; buried oxide; epitaxial layer; Epitaxialschicht; etch stop; etching; Membran; Membranes; SIMOX

Abstract
In this paper it is shown that low dose SIMOX is an efficient etch-stop to fabricate silicon membranes with well defined thickness. Due to the very high selectivity of TMAH as etch solution a four times lower oxygen dose than for standard SIMOX production is sufficient to form a good etch stop layer. This technique allows for a simple and very cost effective batch process production in addition into a large improvement of the silicon film quality.

: http://publica.fraunhofer.de/documents/PX-33546.html