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Advanced SOI MOSFET for low voltage, low power and fast application

: Stephan, Rolf; Raab, Michael; Kück, Heinz; Vogt, Holger


Maszara, W.P. ; Institute of Electrical and Electronics Engineers -IEEE-:
International SOI Conference '94. Proceedings
Piscataway/N.J., 1994
ISBN: 0-7803-2406-4
International SOI Conference <1994, Nantucket Island/Mass.>
Conference Paper
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
elektrische Spannung; geringe Verlustleistung; Halbleitertechnologie; MOS-FET; SOI

Modeling of the self-heating effect in SOI MOSFET's recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into SPICE3 netlist. The dynamics of the self-heating process will be shown by several simulations.