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  4. Silicon x-ray masks - pattern placement and overlay accuracy
 
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1986
Journal Article
Title

Silicon x-ray masks - pattern placement and overlay accuracy

Abstract
Epitaxial-grown silicon as the membrane and gold as the absorber material fulfils the requirements on an x-ray mask concerning longterm stability and absorber-induced distortions. The pattern placement accuracy of the master masks is primarily determined by the e-beam writing process and yields appr. 0.1 micrometer (3 sigma). The overlay of two different masters meets the target specifications (0.15 micrometer (3 sigma)) even in a non-optimal mask geometry. In case of x-ray copies the deviations from the CAD data amount to 0.2 micrometers and are mainly generated by temperature rise during exposure in a non-optimized exposure system.
Author(s)
Betz, H.
Huber, H.-L.
Pongratz, S.
Rohrmoser, W.
Windbracke, W.
Mescheder, U.
Journal
Microelectronic engineering  
Conference
International Conference on Microlithography 1986  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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