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Silicon-on-Insulator development in Europe

 
: Belz, J.; Burbach, G.; Vogt, H.; Zimmer, G.

Solid state technology 34 (1991), No.2, pp.79-83
ISSN: 0038-111X
English
Journal Article
Fraunhofer IMS ()
material development; silicon-on-insulator; smart power; SOI; VLSI on SIMOX

Abstract
Since silicon-on-insulator offers several inherent advantages over other procedures for CMOS circuit operation, SOI has become an important development area. This paper reviews European progress in SOI techniques, including layer isolation by high dose oxygen implantation (SIMOX) for VLSI and smart power, wafer bonding for smart power, and recrystallization for 3D or sensor applications.

: http://publica.fraunhofer.de/documents/PX-33519.html