Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Shallow p-n junctions produced by laser doping with boron silicate glass

 
: Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.

E-MRS Spring Meeting 1992. Proceedings
1992
European Materials Research Society (Spring Meeting) <1992, Strasbourg>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
diffusion; diode; doping; Dotierung; Halbleiter; laser; leakage current; pn-junction; pn-Übergang; semiconductor; shallow; silicon; Silizium

Abstract
Shallow junctions have been fabricated using an excimer and a COsub2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth of about 100 nm.

: http://publica.fraunhofer.de/documents/PX-33338.html