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Shallow p-n junctions produced by laser doping with boron silicate glass

: Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.

E-MRS Spring Meeting 1992. Proceedings
European Materials Research Society (Spring Meeting) <1992, Strasbourg>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
diffusion; diode; doping; Dotierung; Halbleiter; laser; leakage current; pn-junction; pn-Übergang; semiconductor; shallow; silicon; Silizium

Shallow junctions have been fabricated using an excimer and a COsub2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth of about 100 nm.