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  4. Shallow junction formation by dopant outdiffusion from CoSi2 and its application in sub 0.5 mu m MOS processes
 
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1993
Journal Article
Title

Shallow junction formation by dopant outdiffusion from CoSi2 and its application in sub 0.5 mu m MOS processes

Abstract
Two different methods for shallow junction formation and poly-Si doping based on outdiffusion of As, B, BF2 from CoSi2 have been evaluated in complete sub 0.5 mu m NMOS and PMOS processes. p+ and n+ junctions were processed with a total depth down to 100 nm and 140 nm, respectively. The leakage current density was measured in the range of 1E-9 Acm-2 at VR=-5 V for p+ diodes. The n+ diodes exhibit an increased leakage current at 1E-5 Acm-2. In order to evaluate the device performance, transistors with effective channel lengths down to 0.25 mu m and good static device behavior have been fabricated by means of X-ray lithography. A special outdiffusion technique is able to reduce the boron penetration through thin gate oxides >or=5 nm.
Author(s)
Niazmand, M.
Friedrich, D.
Windbracke, W.
Journal
Microelectronic engineering  
Conference
International Conference on Microcircuit Engineering (ME) 1992  
DOI
10.1016/0167-9317(93)90105-E
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • chemical interdiffusion

  • cobald compounds

  • ion implantation

  • leakage currents

  • metallisation

  • MOS integrated circuits

  • semiconductor doping

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