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Shallow doping profiles produced with pulsed lasers

 
: Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.

MIEL-SD '92. Proceedings
1992
MIEL <1992, Portoroz>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
diffusion; doping; laser; shallow junction; silicate glass; sub-my-CMOS

Abstract
Shallow junctions have been fabricated using an excimer and a COsub2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth in the range of 80 nm to 150 nm.

: http://publica.fraunhofer.de/documents/PX-33335.html