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An advanced fabrication process for 3D-CMOS devices

 

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Kristallisation; laser; MOS; polysilicon; Polysilizium; recrystallization; SOI

Abstract
An advanced 2 mym 3D-CMOS process was developed which allows the fabrication of NMOS devices in the substrate and CMOS devices in a thin laser recrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a high-quality SOI layer and to avoid any degradation of underlying substrate devices. The fabricated devices in both layers show customary bulk device quality.

: http://publica.fraunhofer.de/documents/PX-3329.html