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1992
Conference Paper
Titel
An advanced CAD model for the thin-film SOI MOSFET
Abstract
The charge sheet approach, which allows the modeling of the electronic behaviour of the MOS transistor in all regions of inversion has been adapted to the SOI MOSFET. Particular interest has been paid into an efficient description of the surface potentials in the transistor. As a result, a complete CAD model of the SOI MOSFET which has been implemented into the SPICE 3 circuit simulation program, is proposed.
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