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Title
Sensorelement
Date Issued
2002
Author(s)
Patent No
19980002356
Abstract
The sensor element uses a floating-gate field-effect transistor (10) which is sensitive to the physical parameter to be detected. The floating gate (20) may be supplied with charge via a tunnel effect. The field effect transistor is formed in a substrate (12), with the floating gate formed so that a section of it overlies a highly doped region (22), this region forming the tunnel region. The charge may be supplied to the floating gate and removed from it via a programme unit. USE - E.g. in neuronal networks. To reduce noise in large photosensor arrays. ADVANTAGE - Non-volatile storage of charge corresponding to detected physical parameter by transistor floating gate.
Language
de
Patenprio
FR 19980002356 A 19980226