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The self-heating effect and its influence on the electrical properties of SOI MOSFETs
This paper studies the influence of self-heating on the physical properties of SOI MOSFETs through the comparison of the results which are modelled electrothermaly with the results which are modelled only electrically. A new analytical two-dimensional electrothermal model is introduced and then the difference between electrothermal and electrical modellings is compared and analysed. The dependance of the channel temperature on the applied voltages is shown at the first time. The meaning of the influence of the self-heating on the device properties is discussed at the end of this paper.