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Addition of N2 as a polymer deposition inhibitor in CH4/H2 electrocyclotron resonance plasma etching of Hg1-xCdxTe

Zusatz von N2 zum Prozeßgas zur Unterdrückung von Polymerabscheidungen beim CH4/H2-Plasmaätzen von Hg1-xCdxTe
 
: Keller, R.C.; Seelmann-Eggebert, M.; Richter, H.J.

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Applied Physics Letters 67 (1995), No.25, pp.3750-3752
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer IAF ()
Cadmium compounds; ECR-Plasma; HgCdTe; II-VI semiconductors; Mercury compounds; plasma etching

Abstract
An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition in etching compound semiconductor with CH4/H2 based plasmas. We find that atomic nitrogen, created by the addition of N2 to the plasma, inhibits polymer deposition in the chamber and on the sample. Atomic nitrogen has several beneficial effects; the elimination of polymer precursors, the reduction of the atomic hydrogen concentration, and a potential increase of methyl radical concentration. It is also demonstrated that the addition of N2 to CH4/H2 based electrocyclotron resonance plasmas used to etch HgCdTe eliminates the roughness normally formed during etching.

: http://publica.fraunhofer.de/documents/PX-3243.html