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1988
Conference Paper
Titel
Safety aspects of ion implantation.
Alternative
Sicherheitsaspekte bei der Ionenimplantation
Abstract
Ion implantation has become the most important doping technique for semiconductor devices in recent years. Ion implanters have changed from complicated experimental equipment to computer-controlled, automated machines. Nonetheless, implanters are still dangerous unless they are designed and operated properly. The main hazards result from high voltages, x-rays, and from toxic chemicals necessary to produce the desired ions. In this paper, the hazards typical for implanters will be discussed. (AIS-B)
Konferenz
Language
English