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S-parameter simulation of HBTs on Gallium-Arsenide

S-Parameter Simulation von Gallium-Arsenid-HBTs
 

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Institute of Electrical and Electronics Engineers -IEEE-:
7th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications 1999
S.l.: IEEE, 1999
ISBN: 0-7803-5298-X
pp.15ff
International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) <7, 1999, London>
English
Conference Paper
Fraunhofer IAF ()
Bauelemente-Simulation; device simulation; Heterobipolartransistor; heterojunction bipolar transistor; MINIMOS-NT; physical-based S-parameter; physikalisch basierter S-Parameter; thermal device simulation; thermische Bauelementsimulaation

Abstract
We present two-dimensional simulations of one-finger power Heterojunction Bipolar Transistors (HBTs) on GaAs. Several important physical models are discussed. We demonstrate good agreement of simulations of four different types of devices with measured data in a wide temperature range. In addition, we were able by accounting properly for self-heating to simulate correctly the output device characteristics. Finally, we simulated S-parameters with our two-dimensional device simulator at 5 GHz and calculated them for the range from 0 to 20 Ghz using T-like eight element small signal equivalent circuit. A comparison of simulated and measured S-parameters is presented in the paper.

: http://publica.fraunhofer.de/documents/PX-32321.html