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Resonant raman scattering on In+-implanted CdTe and Cd0.23Hg0.77Te.

Resonante Ramanstreuung an In+-implantiertem CdTe und Cd0.23Hg0.77Te
: Lusson, A.; Ramsteiner, M.; Wagner, J.


Applied Physics Letters 54 (1989), No.18, pp.1787-1789 : Abb.,Lit.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
ion implantation; Ionenimplantation; resonant Raman scattering; resonante Ramanstreuung

In+ -implanted CdTe and Cd0.23 Hg 0.77Te have been studied by resonant Raman scattering. Dipole-forbidden but defect-induced scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is strongly affected by implantation of 350 keV In+ with doses ranging from 10 high 11 to 5x10 high 14 ions/qcm. The intensity ratio of the one-LO and the two-LO phonon lines is found to be a measure of the implantation damage in CdTe and in the alloy Cd0.23 Hg0.77 Te. The observed implantation effects on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances as demonstrated for the E zero and Delta zero gap resonance in CdTe.