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Resonant raman scattering in hexagonal GaN

Resonante Ramanstreuung an hexagonalem GaN
: Behr, D.; Wagner, J.; Schneider, J.; Amano, H.; Akasaki, I.


Applied Physics Letters 68 (1996), No.17, pp.2404-2406
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
GaN; raman spectroscopy; Ramanspektroskopie; resonant Raman scattering; resonante Ramanstreuung

We performed resonant Raman scattering in hexagonal GaN using discrete laser lines in the violet and UV spectral range for optical excitation. To tune the energetic position of the fundamental gap E(ind 0) of GaN relative to the exciting photon energy the sample temperature was varied between 77 and 870 K. Analyzing both Stokes and anti-Stokes Raman spectra, the resonance profiles for Fröhlich-induced one-E(ind 1)(L0) and two-E(ind 1)(L0) phonon scattering could be deduced, covering the energy range from 0.5 eV below the E(ind 0) gap up to the gap energy. The strength of deformation-potential scattering by the A(ind1)(T0) mode was used as an internal reference. For excitation slightly above the E(ind 0) gap energy E(ind 1)(L0) multiphonon scattering up to the fourth order was observed, which reflects the stronger polarity of the Ga-N bond as corn~ to conventional III-V semiconductors.