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Resonant multi-LO-phonon Raman scattering in hexagonal GaN
Resonante Multi-LO-Phononen-Ramanstreuung in hexagonalem GaN
|Scheffler, M.; Zimmermann, R.:|
23rd International Conference on the Physics of Semiconductors 1996. Vol. 1
Singapore: World Scientific, 1996
pp.505-508 : Ill., Lit.
|International Conference on the Physics of Semiconductors <23, 1996, Berlin>|
| Conference Paper|
|Fraunhofer IAF ()|
| hexagonal GaN; hexagonales GaN; resonant Raman scattering; resonante Ramanstreuung|
We report on resonant Raman scattering in state-of-the-art hexagonal GaN. Besides multi-LO-phonon scattering up to fifth order, dispersive modes were observed which are interpreted as acoustic phonon interbranch exciton-polariton scattering followed by LO-phonon emission. Within this model the sound velocities of TA- and LA-phonon modes were determined propagating in the direction with the strongest piezoelectric coupling. A fit to the experimental data yields values of 6500m/s and 8400 m/s for the TA- and LA-phonon mode. respectively.