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Resonant multi-LO-phonon Raman scattering in hexagonal GaN

Resonante Multi-LO-Phononen-Ramanstreuung in hexagonalem GaN

: Behr, D.; Wagner, J.; Niebuhr, R.; Merz, C.; Bachem, K.H.; Amano, H.; Akasaki, I.

	Scheffler, M.; Zimmermann, R.: 23rd International Conference on the Physics of Semiconductors 1996. Vol. 1 Singapore: World Scientific, 1996 ISBN: 981-02-2777-9 ISBN: 981-02-2945-3 pp.505-508 : Ill., Lit.
	International Conference on the Physics of Semiconductors <23, 1996, Berlin>

	English
	Conference Paper
	Fraunhofer IAF ()
	hexagonal GaN; hexagonales GaN; resonant Raman scattering; resonante Ramanstreuung

Abstract
We report on resonant Raman scattering in state-of-the-art hexagonal GaN. Besides multi-LO-phonon scattering up to fifth order, dispersive modes were observed which are interpreted as acoustic phonon interbranch exciton-polariton scattering followed by LO-phonon emission. Within this model the sound velocities of TA- and LA-phonon modes were determined propagating in the direction with the strongest piezoelectric coupling. A fit to the experimental data yields values of 6500m/s and 8400 m/s for the TA- and LA-phonon mode. respectively.