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Resonant electron and hole tunneling between GaAs quantum wells

Resonantes Tunneln von Elektronen und Löchern zwischen GaAs Quantentrögen
: Heberle, A.P.; Rühle, W.W.; Köhler, K.

Laubereau, A.:
Ultrafast processes in spectroscopy 1991. Proceedings
Bristol: IOP Publishing, 1992 (Institute of Physics - Conference Series 126)
ISBN: 0-7503-0198-8
pp.367-370 : Abb.,Lit.
International Symposium on Ultrafast Processes in Spectroscopy <7, 1991, Bayreuth>
Conference Paper
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; time resolved photoluminescence; zeitaufgelöste Photolumineszenz

Time-resolved photoluminescence measurements in the picosecond regime are reported for a GaAs/Alsub0.35Gasub0.65As asymmetric double quantum well structure biased by electric fields of positive or negative polarity. A large number of electron and hole resonances is detected. A splitting of the ground state resonances reveals the importance of excitonic effects. Longitudinal optical phonon assisted tunneling plays a minor role for narrow quantum wells in comparison with impurity or interface roughness assisted transfer.