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Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.

Resonanzeffekte in der Ramanstreuung von dotierungsinduzierten lokalen Schwingungsmoden in III-V Halbleitern
: Newman, R.C.; Koidl, P.; Wagner, J.


Applied Physics Letters 59 (1991), No.14, pp.1729-1731 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
doping; Dotierung; III-V Halbleiter; III-V semiconductors; local vibrational modes; lokale Schwingungsdauer; raman scattering; Ramanstreuung

Resonant Raman scattering work is reported on local vibrational modes (LVM) of Si and Be in highly doped 3-V semiconductors, such as GaAs, InAs, and InSb. Raman scattering by the LVM of Si donors on group-Ill lattice sites is found to be strongly enhanced for incident photon energies matching the El band-gap energy of the host semiconductor indicating a rather narrow resonance in the scattering cross section. Raman scattering by LVM produced by acceptors, by contrast, is observed for a much wider range of photon energies, which corresponds to a much broader resonance. Possible explanations for this difference in resonance behavior are discussed including resonant donor energy levels derived from the L-point conduction-band minima. The present observations demonstrate, further, that attention must be paid to the appropriate choice of incident photon energies in order to achieve maximum sensitivity in a LVM Raman experiment.