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1993
Journal Article
Titel
Residual stress during local SIMOX process - Raman measurement and simulation
Abstract
Possible sources of mechanical stress arising during fabrication of local SOI structures were discussed.A finite element package was employed in order to obtain two-dimensional stress profiles.The simulated data were compared with Raman measurements.It was shown that at the same time a volume expansion of the buried oxide and a contraction of the SOI layer are present. Qualitative agreement between measurements and simulation results could be achieved.Further TEM studies are suggested to improve the accuracy of the model.
Language
English