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Reliability of passivated 0.15 mu m InAlAs/InGaAs HEMT's with pseudomorphic channel

Zuverlässigkeit von passivierten 0.15 mu m InAlAs/InGaAs HEMTs mit pseudomorphem Kanal


IEEE Electron Devices Society; IEEE Reliability Society:
IEEE International Reliability Physics Symposium 1999. Proceedings
Piscataway, NJ: IEEE, 1999
ISBN: 0-7803-5220-3
ISBN: 0-7803-5221-1
ISBN: 0-7803-5222-X
pp.99-102 : Ill.
International Reliability Physics Symposium <37, 1999, San Diego/Calif.>
Conference Paper
Fraunhofer IAF ()
Fluor; fluorine; HEMT; InP; Lebensdauer; life time; reliability; Zuverlässigkeit

Accelerated life tests of 0. 15 mu m gate length InAlAs/InGaAs HEMTs were performed under DC electrical stress at four temperatures in nitrogen. By defining a 100 per cent-degradation of transconductance as failure criterion we found an activation energy of 1.8 eV and a projected life time of 5x10(exp 6) h at 125 degree ambient temperature. The degradation was found to be much faster in air than in nitrogen. High temperature storage tests showed that our devices are not sensitive to hydrogen.