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1996
Journal Article
Titel
Relaxation dynamics of electrons between Landau levels in GaAs
Alternative
Relaxationsdynamik von Elektronen zwischen Landau-Niveaus in GaAs
Abstract
The relaxation dynamics of free electrons between Landau levels is traced on a picosecond time scale via the time evolution of the band-to-acceptor luminescence in p-type GaAs after resonant excitation of the n = 1 Landau level. For electron densities N>10(exp 14) cm(exp -3), relaxation occurs via electron-electron scattering with a 1/e decay time of 7.5 X 10(exp 15) ps cm (exp -3)IN. For lower electron densities, relaxation becomes independent of density due to elastic impurity scattering.
Author(s)