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Relaxation dynamics of electrons between Landau levels in GaAs

Relaxationsdynamik von Elektronen zwischen Landau-Niveaus in GaAs
: Hannak, R.M.; Rühle, W.W.; Köhler, K.


Physical Review. B 53 (1996), No.24, pp.R16137-R16139
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; time resolved measurement; zeitaufgelöste Messung

The relaxation dynamics of free electrons between Landau levels is traced on a picosecond time scale via the time evolution of the band-to-acceptor luminescence in p-type GaAs after resonant excitation of the n = 1 Landau level. For electron densities N>10(exp 14) cm(exp -3), relaxation occurs via electron-electron scattering with a 1/e decay time of 7.5 X 10(exp 15) ps cm (exp -3)IN. For lower electron densities, relaxation becomes independent of density due to elastic impurity scattering.