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1993
Journal Article
Titel
Relating mym-wave mapped data to physical parameters for MODFETs.
Alternative
Bestimmung physikalischer Parameter von MODFETs aus Mikrowellen-Messungen
Abstract
Modulation doped Alsub0.2Gasub0.8As/Insub0.3Gasub0.7As high electron mobility transistors (HEMT) were statistically characterized at my-wave frequencies. The results provided information to optimize transistor fabrication technology and as well to investigate transistor reliability and reproducibility to allow the design of multi stage low noise amplifiers (LNAs).
Author(s)