Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Relating mym-wave mapped data to physical parameters for MODFETs.

Bestimmung physikalischer Parameter von MODFETs aus Mikrowellen-Messungen


Materials Science and Engineering, B. Solid state materials for advanced technology 20 (1993), pp.37-40 : Abb.
ISSN: 0921-5107
Journal Article
Fraunhofer IAF ()
gate length extraction; Gatelängenbestimmung; microwave characterization; Mikrowellen-Charakterisierung; MODFET

Modulation doped Alsub0.2Gasub0.8As/Insub0.3Gasub0.7As high electron mobility transistors (HEMT) were statistically characterized at my-wave frequencies. The results provided information to optimize transistor fabrication technology and as well to investigate transistor reliability and reproducibility to allow the design of multi stage low noise amplifiers (LNAs).