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Reduction of lateral parasitic current flow by buried recombination layers formed by high-energy implantation of C or O into silicon
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1997
Conference Paper
Titel
Reduction of lateral parasitic current flow by buried recombination layers formed by high-energy implantation of C or O into silicon
Author(s)
Bogen, S.
Herden, M.
Frey, L.
Ryssel, H.
Hauptwerk
Ion implantation technology 1996. Proceedings of the Eleventh International Conference on Ion Implantation Technology
Konferenz
International Conference on Ion Implantation Technology (IIT) 1996
DOI
10.1109/IIT.1996.586578
Language
English
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