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Reduction of lateral parasitic current flow by buried recombination layers formed by high-energy implantation of C or O into silicon

 
: Bogen, S.; Herden, M.; Frey, L.; Ryssel, H.

:

Ishidida, E.:
Ion implantation technology 1996. Proceedings of the Eleventh International Conference on Ion Implantation Technology
Piscataway: IEEE, 1997
ISBN: 0-7803-3289-X
pp.792
International Conference on Ion Implantation Technology (IIT) <11, 1996, Austin/Texas>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()

: http://publica.fraunhofer.de/documents/PX-31456.html