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Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs.

Umverteilung von epitaktischem Si auf -001- GaAs während des Überwachens mit GaAs
: Brandt, O.; Crook, G.E.; Ploog, K.; Maier, M.; Wagner, J.


Applied Physics Letters 59 (1991), No.21, pp.2730-2732 : Abb.,Tab.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
raman spectroscopy; Ramanspektroskopie; segregation; Si pseudomorph auf GaAs; Si pseudomorphic on GaAs

We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 10high19 Si- atoms/ccm in the first 40 nm of the GaAs cap layer. The systematic investigation of samples having different cap thickness by Hall effect measurements and local vibrational mode Raman spectroscopy allows us to identify the site distribution of Si atoms in the cap layer and yields insight into the migration mechanism.