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Recombination of point defects via extended defects and its influence

Rekombination von Punktdefekten über höherdimensionale Defekte und deren Einfluß auf die Diffusion von Dotieratomen
 
: Stiebel, D.; Pichler, P.

Meyer, K. de; Biesemans, S.:
SISPAD 98. Simulation of semiconductor processes and devices
Wien: Springer, 1998
ISBN: 3-211-83208-4
pp.360-363
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <3, 1998, Leuwen>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
diffusion; Punktdefekt; Rekombination; silicium

Abstract
The transient enhanced diffusion of dopants in silicon is known to begoverned by the interaction of extended defects and intrinsic pointdefects. In this work we present calculations of the formation ofextended defects and their interactions with point defects, based onab-initio calculations of Gilmer, Caturla, and coworkers. Dissolutionof the extended defects may occur either by diffusion of point defectsto surfaces and interfaces, or by reactions in the bulk. The work presented here emphasizes especially the reaction of point defects with extended defects which is shown to be more effective than bulk recombination.

: http://publica.fraunhofer.de/documents/PX-31340.html