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Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon

 
: Bogen, S.; Frey, L.; Herder, M.; Ryssel, H.

IBBM '95. Ion Beam Modification of Materials. Proceedings
1995
Ion Beam Modification of Materials <1995, Canberra>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
Hochenergieimplantation; Kohlenstoff; Rekombinationszentrum; Sauerstoff; Soft-Error; vergrabene Schichtl

Abstract
Oxygen or carbon were implanted at an energy of 5 and 4 MeV into n- and p-type (100) Si. The implantation dose was 5.x10(15) square centimetre. Characterization of the recombination layers was accomplished by spreading resistance measurements and by measurements of the well diode current voltage characteristics. Current voltage characteristics of p-well diodes showed that reverse currents were reduced by about 50% by carbon implantation in n-type material compared to the non-implanted samples. Spreading resistance measurements of the implanted p-substrate showed that both oxygen and carbon implantations produced an n-doped layer resulting in an n-p-n-p structure in the case of n-wells. To investigate the capability of these layers for suppression of soft errors and excess charge carriers, charge carriers were generated by illumination of the back side of the wafers. These excess carriers were effectively suppressed in the implanted layers, reducing the reverse current by one to more th an three orders of magnitude for oxygen and carbon implantation.

: http://publica.fraunhofer.de/documents/PX-31339.html