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Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si

Echtzeit-Untersuchung des Dotierstoffeinbaus und der Segregation während des MBE-Wachstums von GaAs(001):Si

Woo, J.C.; Park, Y.S.:
Compound Semiconductors 1995. Proceedings of the Twenty-Second International Symposium on Compound Semiconductors
Bristol: IOP Publishing, 1996 (Institute of Physics - Conference Series 145)
ISBN: 0-7503-0342-5
International Symposium on Compound Semiconductors <22, 1995, Cheju Island>
Conference Paper
Fraunhofer IAF ()
GaAs; RAS; RHEED; segregation; Si doping; Si-Dotierung

The incorporation as well as segregation of dopant atoms during Si delta-doping of GaAs (001) has been studied in real-time by using reflection high-energy electron diffraction (RHEED) and reflectance anisotropy spectroscopy (RAS). Under conditions of enhanced Si adatom mobility distinct ordering processes are observed, which are promoted by ordered step arrays on the vicinal surface. The demonstrated real-time control of the complete delta-doping process is promising for a tailoring of doping structures.