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Raman spectroscopy of delta-doped GaAs layers and wires.

Ramanspektroskopie delta-dotierter GaAs-Schichten und Drähte
: Wagner, J.

Glembocki, O.J. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Spectroscopic characterization techniques for semiconductor technology IV : 25 - 26 March 1992, Somerset, New Jersey. Proceedings
Bellingham, Wash.: SPIE, 1992 (SPIE Proceedings Series 1678)
ISBN: 0-8194-0839-5
Conference "Spectroscopic Characterization Techniques for Semiconductor Technology <4, 1992, Somerset/NJ>
Conference Paper
Fraunhofer IAF ()
delta-doping; Delta-Dotierung; GaAs; raman spectroscopy; Ramanspektroskopie

Raman spectroscopy is used to study the incorporation of Si in Delta-doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two- dimensional electron gas in Delta-doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition the effect of additional lateral confinement on these subbands can be studied.