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1991
Journal Article
Titel
Raman spectroscopy for impurity characterization in III-V semiconductors.
Alternative
Raman-Spektroskopie zur Charakterisierung von Störstellen in III-V Halbleitern
Abstract
Raman spectroscopy is discussed as a tool for the quantitative assessment of impurities and defects in III-V semiconductors. After a brief discussion of the effect of defects on Raman scattering by intrinsic phonon modes emphasis is laid on the characteriazation of individual impurities either via scattering by impurity-induced local vibrational modes or via scattering by internal electronic excitations.