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Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.

Ramanspektroskopische Untersuchung des drahtartigen Einbaus von Si Dotieratomen auf GaAs-001- Vicinaloberflächen


Applied Physics Letters 64 (1994), No.4, pp.490-492 : Abb.,Tab.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
GaAs; Quantendraht; quantum wire; raman spectroscopy; Ramanspektroskopie; Si doping; Si Dotierung

Raman scattering by collective electronic excitations from a delta-doping layer has been used to investigate the ordered incorporation of Si dopant atoms on vicinal GaAs(001) surfaces. In a series of delta-doped samples grown by molecular beam epitaxy (MBE) under specific conditions the Si dopant atoms were found to be incorporated predominantly on Ga sites, even at a doping concentration as high as 1.8 x 10 high 13 cm high -2. A pronounced polarization asymmetry in the Raman scattering intensity of collective intersubband plasmon-phonon modes was observed in a sample grown under conditions established by real-time high-energy electron diffraction to be favorable for wirelike Si incorporation.