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A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers

Ramanspektroskopische Untersuchung des Einbaus von Si, Be und C in relaxierte InxGa1-xAs-Schichten


Journal of applied physics 78 (1995), No.7, pp.4690-4695
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
Beryllium; C doping; C-Dotierung; carbon; gallium arsenide; Indium compounds; raman spectroscopy; Ramanspektroskopie; semiconductor doping; silicon

The incorporation of high concentrations (>1019 cm-3) of Si, Be, and C in InxGa1-xAs relaxed layers has been studied as a function of In content (x