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Raman spectroscopic study of the H-CAs complex in epitaxial AlAs

Ramanspektroskopische Untersuchung des H-CAs Komplexes in epitaktischem AlAs
: Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.


Semiconductor Science and Technology 10 (1995), pp.639-644 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Journal Article
Fraunhofer IAF ()
AlAs; carbon doping; Kohlenstoffdotierung; raman spectroscopy; Ramanspektroskopie

H-CdeepAs pairs in epitaxial layers of AlAs have been studied by local vibrational mode (LVM) Raman spectroscopy and complemented by infrared (IR) aborption measurements performed on the same samples. Inelastic light scattering by the symmetric A1high+ mode (x), the antisymmetric A1high- mode (stretch) and the 'carbon-like' antisymmetric Ehigh- mode (Ydeep2) was detected and the mode frequencies were found to be in good agreement with the IR absorption measurements. All four isotopic combinations of H(D) and high12C/high13C were detected for the X and stretch modes, but only three of the Ehigh- modes (Ydeep2) were detected since the high12YhighHdeep2 line was obscured by second-order scattering from to(X) phonons. Polarization-dependence Raman measurements allowed mode symmetries to be determined for the first time, confirming previous assignments of the LVMs of H-CdeepAs pairs observed by IR absorption.