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Raman spectroscopic study of point defects in bulk GaAs.

Raman-spektroskopische Untersuchungen von Punktfeldern in massiven GaAs-Kristallen
: Ramsteiner, M.; Seelewind, H.; Wagner, J.

Griffith, J.E. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
International Conference on Raman and Luminescence Spectroscopy in Technology 1987
Bellingham/Wash.: SPIE, 1987 (Proceedings of SPIE 822)
ISBN: 0-89252-857-5
pp.16-21 : Abb.,Lit.
International Conference on Raman Spectroscopy <1987, San Diego/Calif.>
Conference Paper
Fraunhofer IAF ()
GaAs; Punktfeld; Ramanstreuung

Raman scattering with below-band-gap light has been used to study residual extrinsic acceptors as well as the intrinsic 78/203 meV double acceptor in bulk GaAs. Both electronic and vibronic excitations of these defects are observed in the low-temperature Raman spectrum. Electronic scattering of extrinsic acceptors - namely carbon and zinc - in semi-insulating material provides a quantitative tool for materials characterization with a detection limit of smaller than 5x10 E14 acceptors/cubic meter. Polarized Raman spectra give insight into the electronic structure of the 78/203 meV acceptor. (IAF)