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1987
Conference Paper
Titel
Raman spectroscopic study of point defects in bulk GaAs.
Alternative
Raman-spektroskopische Untersuchungen von Punktfeldern in massiven GaAs-Kristallen
Abstract
Raman scattering with below-band-gap light has been used to study residual extrinsic acceptors as well as the intrinsic 78/203 meV double acceptor in bulk GaAs. Both electronic and vibronic excitations of these defects are observed in the low-temperature Raman spectrum. Electronic scattering of extrinsic acceptors - namely carbon and zinc - in semi-insulating material provides a quantitative tool for materials characterization with a detection limit of smaller than 5x10 E14 acceptors/cubic meter. Polarized Raman spectra give insight into the electronic structure of the 78/203 meV acceptor. (IAF)
Language
English
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