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Raman spectroscopic study of interfaces in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular beam epitaxy

Ramanspektroskopische Untersuchung von Grenzflächen in InAs/AlSb und InAs/AlAs/AsSb Quantum Wells hergestellt mittels Molekularstrahlepitaxie
: Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.


Superlattices and Microstructures 14 (1993), No.4, pp.271-275 : Abb., Lit.
ISSN: 0749-6036
Journal Article
Fraunhofer IAF ()
Heterogrenzfläche; heterointerface; InAs/AlSb quantum well; raman spectroscopy; Ramanspektroskopie

Raman scattering from both longitudinal optical phonons and interface modes has been used to study the chemical bonding across the InAs/AlSb interface in GaSb capped InAs/AlSb quantum wells grown by solid-source molecular-beam epitaxy. The effusion cell shutter sequence for the growth of the interfaces was selected for the deposition of either 1 monolayer (ML) of InSb or 2 to 3 MLs of AlAs. The latter growth sequence should in principle strongly favour the formation of AlAs-like interfaces. In all cases an InSb-like interface mode is observed, indicating the preferential formation of In-Sb bonds irrespective of the shutter sequence. This behaviour is in contrast to that found for InAs/GaSb heterostructures where both types of interface bonds, InSb-like and GaAs-like, were observed according to the shutter sequence. The deposition of 2 or 3 MLs of AlAs at the InAs/AlSb interface results in the formation of pseudo-ternary AISb (ind 1-x) As (ind x) barriers rather than binary AlAs interfa ces and AlSb barriers, indicating a strong exchange among the group V atoms.