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Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication

: Jantz, W.; Wagner, J.; Frey, T.


Applied Physics Letters 51 (1987), No.23, pp.1904-1906 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
Gallium Arsenid; Ramanstreuung; Si(plus)implantiert

The annealing of the lattice damage introduced by Si+ implantation into GaAs as well as the electrical activation of the dopant has been studied by Raman scattering. Implantation doses (4x10 E12-1x10 E13 cm -2) and annealing conditions (800-1040 degrees C for 5 s) were used which are typical for GaAs metal-semiconductor field-effect transistor fabrication. The normalized peak intensity of the longitudinal optical (LO) phonon-plasmon coupled mode is found to correlate with the sheet of conductivity, i.e., it probes the electrical activation. The lattice perfection, in contrast, is most sensitively measured by resonant 2LO-phonon scattering. (IAF)