Raman scattering study of implantation damage and annealing in GaAs

First and second-order Raman scattering have been used to probe ion implantation induced damage and its annealing in GaAs. Resonant second-order scattering by two longitudinal optical phonons was found to be more sensitive to the lattice perfection than first-order scattering especially in the range of annealing conditions where electrical activation of the dopant sets in. This is demonstrated e.g. for low dose (4 x 10 E12 - 1 x 10 E13 cm E-2, 100 keV) Si+ implanted material as typically used for GaAs MESFET production. (IAF)