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Raman scattering of residual acceptors in GaAs and its application to optical topography

Chapter 6

Ramansstreuung an residuären Akzeptoren in GaAs und ihre Anwendung für optische Topographie

	5th Conference on Semi-Insulating III-V Materials '88. Proceedings IOP Publishing, 1988 pp.507-514 : Abb.,Lit.
	Conference on Semi-Insulating III-V Materials <5, 1988, Malmö>

	English
	Conference Paper
	Fraunhofer IAF ()
	GaAs; Ramanstreuung; Restakzeptor; Topographie(optisch)

Abstract
Raman scattering of acceptors in GaAs is discussed. It is shown how this technique can be used for a quantitative assessment of residual acceptors in semi-insulating material. Based on this quantitative assessment it is further demonstrated that Raman scattering allows on optical topography of the residual acceptor distribution in GaAs wafers. (IAF)