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Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities

: Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M.

Fan, J.C. ; Materials Research Society -MRS-:
Energy beam-solid interactions and transient thermal processing. Symposium : Symposium held November 1983 in Boston, Massachusetts, USA
New York: North-Holland, 1984 (Materials Research Society symposia proceedings 23)
ISBN: 0-444-00903-5
Materials Research Society (Symposium) <1983, Boston/Mass.>
Conference Paper
Fraunhofer IAF ()
Ramanstreuung; ultrahochdotiertes Germanium; ultrahochdotiertes Silizium