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Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
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1984
Conference Paper
Titel
Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
Author(s)
Axmann, A.
Compaan, A.
Contreras, G.
Cardona, M.
Hauptwerk
Energy beam-solid interactions and transient thermal processing. Symposium
Konferenz
Materials Research Society (Symposium) 1983
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
Ramanstreuung
ultrahochdotiertes Germanium
ultrahochdotiertes Silizium