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Radiation-induced transmission loss of integrated optic waveguide devices

: Henschel, H.; Köhn, O.; Schmidt, H.U.

Postprint urn:nbn:de:0011-px-307279 (375 KByte PDF)
MD5 Fingerprint: 66c70111353b4edee9c172b57a734847
Copyright 1993 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Created on: 25.9.2010

Wong, K.-K. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Integrated optical circuits II : 10-11 September 1992, Boston, Massachusetts
Bellingham, WA: SPIE, 1993 (Proceedings of SPIE 1794)
ISBN: 0-8194-0973-1
Conference on Integrated Optical Circuits <2, 1992, Boston/Mass.>
Conference Paper, Electronic Publication
Fraunhofer INT ()
continuous gamma irradiation; coupler; integrated optics; IO on glass; LiNbO3; LiTaO3; phase modulator; pulsed irradiation; radiation induced loss; temperature variation

The radiation sensitivity of different integrated optic (IO) devices was compared under standardized test conditions. We investigated four relatively simple device types made by four different manufacturers. The waveguide materials were proton exchanged LiTaO3, LiNbO3: Ti, Tl-diffused glass, and Ag-diffused glass, respectively. In order to standardize the irradiation parameters we followed the "Procedure for Measuring Radiation-Induced Attenuation in Optical Fibers and Optical Cables" proposed by the NATO NETG as close as possible. In detail we made pulsed irradiations with dose values of about 500 rad *, 10E4 rad, and 10E5 rad, as well as continuous irradiations at a 60Co source with a dose rate of 1300 rad */min up to a total dose of 10E4 rad. Device temperatures were about 22 degree C, -50 degree C, and +80 degree C.